TJ9A10M3 Datasheet, Toshiba Semiconductor

(1) (2) (3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) 3. Packaging and Internal Circuit .

* Switching Voltage Regulators Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) 2. Features (1.